在对传统典型CMOS带隙电压基准源电路分析和总结的基础上,综合一级温度补偿、电流反馈技术,提出了一种12ppm°C低压CMOS带隙电压基准源。采用差分放大器作为基准源的负反馈运放,简化了电路设计。放大器输出用作电路中PMOS电流源偏置,提高了电源抑制比(PSRR)。整个电路采用TSMC0.35Λm CMOS工艺实现,采用HSPICE进行仿真,仿真结果证明了基准源具有低温度系数和高电源抑制比。 关键词互补金属氧化物半导体工艺带隙电压基准源低压温度系数电源抑制比

We demonstrate a novel solution-processed method to fabricate a stable anode buffer layer Without any annealing process. As we know, buffer layers in polymer solar cells (PSCs) are always prepared hi the traditional high-vacuum thermal evaporation or annealing-treated spin-coating methods, but the f