内容概要：本文档详细介绍了LPDDR4x DDR IP（包括控制器和PHY）的验证架构与环境设置。验证架构中，SDRAM配置为4个双通道，每个32Gb容量，AXI VIP由Synopsys提供，共4个AXI agents作为Master，AXI地址位宽为34bit，支持16GB访问空间，数据位宽分别为512bit、128bit、128bit和64bit。此外，还有APB VIP用于配置。测试环境中包括Tb_top、4个AXI VIP、1个APB VIP、SDRAM、DUT和时钟复位信号。比对机制描述了写入和读取操作的具体流程，包括通过后门读取DRAM数据进行比对。文档还涵盖了接口定义、PHY和DRAM初始化步骤以及详细的AXI和APB口VIP配置参数。最后列出了多种用例，如冷热复位、时钟门控、寄存器读写、控制器和PHY初始化等，确保全面覆盖各种可能的操作场景。 适合人群：从事DDR IP验证工作的工程师，特别是对LPDDR4x有一定了解的技术人员。 使用场景及目标：①理解LPDDR4x DDR IP的验证架构及其各个组件的功能；②掌握PHY和DRAM初始化的具体步骤；③熟悉不同类型的测试用例及其应用场景，以确保DDR IP的正确性和稳定性。 其他说明：文档提供了详细的配置参数和初始化流程，有助于工程师深入了解和优化DDR IP的验证环境。建议读者结合实际项目需求，灵活运用文档中的配置示例和测试用例。

JESD209-4-1A LPDDR4X

**重要提醒: 解读已更新到v2.3, 包含老版本所有注解** ** 文档不仅是LP4 Spec文档，而是Spec的注释解读。 ** 解读是注释，即文中黄色或绿色下划线的注解，试读看不到。 ** 退款: 承诺如对文档注释不满意，可线下联系作者申请退款。

LPDDR4 LPDDR4X的设计详解1----上电时序及初始化

个人原创，LPDDR3 &LPDDR4X对比数据，给予MTK平台主要从规格参数，功耗，读写速率，跑分等方面数据对比，为方案选项给与参考。

这是一份相当不做的学习资料

LPDDR4/LPDDR4X SDRAM MT53E256M16D1, MT53E256M32D2 Features This data sheet is for LPDDR4 and LPDDR4X unified product based on LPDDR4X information. Refer to LPDDR4 setting section LPDDR4 1.10V V DDQ at the end of this data sheet. • Ultra-low-voltage core and I/O power supplies – V DD1 = 1.70–1.95V; 1.80V nominal – V DD2 = 1.06–1.17V; 1.10V nominal – V DDQ = 1.06–1.17V; 1.10V nominal or Low V DDQ = 0.57–0.65V; 0.60V nominal • Frequency range – 1866–10 MHz (data rate range: 3733–20 Mbps/ pin) • 16n prefetch DDR architecture • 8 internal banks per channel for concurrent opera- tion • Single-data-rate CMD/ADR entry • Bidirectional/differential data strobe per byte lane • Programmable READ and WRITE latencies (RL/WL) • Programmable and on-the-fly burst lengths (BL = 16, 32) • Directed per-bank refresh for concurrent bank op- eration and ease of command scheduling • Up to 8.5 GB/s per die • On-chip temperature sensor to control self refresh rate • Partial-array self refresh (PASR) • Selectable output drive strength (DS) • Clock-stop capability • RoHS-compliant, “green” packaging • Programmable V SS (ODT) termination Options Marking • V DD1 /V DD2 /V DDQ : 1.80V/1.10V/1.10V or 0.60V E • Array configuration – 256 Meg × 16 (1 channel ×16 I/O) 256M16 1 – 256 Meg × 32 (2 channels ×16 I/O) 256M32 • Device configuration – 256M16 × 1 die in package D1 – 256M16 × 2 die in package D2 • FBGA “green” package – 200-ball WFBGA (10mm × 14.5mm × 0.8mm, Ø0.35 SMD) DS • Speed grade, cycle time – 535ps @ RL = 32/36 -053 – 468ps @ RL = 36/40 -046 • Operating temperature range – –25°C to +85°C WT • Revision :B Note: 1. MT53E256M16D1 is Preliminary status, with the following legal disclaimer: Products and specifications discussed herein are for evalu- ation and reference purposes only and are subject to change by Micron without notice. Products are only warranted by Micron to meet Micron’s production data sheet speci- fications.

This document defines the LPDDR4 standard, including features, functionalities, AC and DC characteristics, packages, and ball/signal assignments. The purpose of this specification is to define the minimum set of requirements for a JEDEC compliant 16 bit per channel SDRAM device with either one or two channels. LPDDR4 dual channel device density ranges from 4 Gb through 32 Gb and single channel density ranges from 2 Gb through 16 Gb. This document was created using aspects of the following standards: DDR2 (JESD79-2), DDR3 (JESD79-3), DDR4 (JESD79-4), LPDDR (JESD209), LPDDR2 (JESD209-2) and LPDDR3 (JESD209-3).

镁光 SPECTEK LPDDR4/LPDDR4X DATASHEET SPEC 200ball

妙存 ArtMem LPDDR4 LPDDR4X 规格书 说明书 datasheet spec