Failure Mechanisms and Models for Semiconductor Devices--JEDEC PUBLICATION Failure Mechanisms and Models for Semiconductor Devices 《JEP-122E-2009 半导体设备的失效机制与模型》是JEDEC（固态技术协会）发布的一份重要出版物，旨在详细阐述半导体器件的失效模式和模型，帮助业界理解和预防半导体产品在设计、制造和使用过程中可能出现的问题。JEDEC是一个全球知名的电子组件标准制定组织，其标准和出版物被广泛应用于消除制造商和购买者之间的误解，促进互换性，提升产品质量，并帮助用户快速选择合适的电子元件。 JEP122E是对2008年修订版JEP122D的更新，首次发表为JEP122D.01，于2009年3月发布。这份文档包含了一系列关于半导体失效机制的专业知识，包括但不限于热应力、电迁移、机械应力、化学反应、辐射效应、热瞬变、静电放电（ESD）损伤、疲劳失效等。这些失效模式是半导体器件在正常工作条件或极端环境下可能遭遇的问题，理解并掌握这些机制对半导体设计和制造至关重要。 标准明确指出，其制定过程不考虑是否涉及专利权，JEDEC并不承担任何专利持有者的责任，也不对采用标准的各方有任何义务。这意味着该标准提供了一个公正的框架，但使用标准的公司仍需自行解决可能存在的知识产权问题。 JEDEC标准和出版物中的信息代表了从半导体设备制造商的角度出发，对产品规范和应用的合理方法。在JEDEC内部，有程序将这些标准进一步处理，最终可能成为ANSI（美国国家标准学会）的标准。这反映了JEDEC对国际标准化工作的积极参与和贡献。 使用者必须满足标准中的所有要求，才能宣称符合该标准。对于标准内容的询问、评论或建议，可以直接联系JEDEC。这份文档可能随时更新，以反映最新的研究和技术进展，确保其内容始终保持在行业的前沿。 《JEP-122E-2009 半导体设备的失效机制与模型》是半导体行业不可或缺的技术参考，它提供了深入理解半导体失效行为的基础，有助于提高设备的可靠性，降低故障率，推动半导体技术的持续发展。

半導體器件-物理與工藝(Semiconductor Devices,Physics and Technology)【施敏】

Low Power Semiconductor Devices and Processes for Emerging Applications in Communications, Computing,and Sensing 2019 Low Power Semiconductor Devices and Processes for Emerging Applications 2018.part1.rar (16.1 MB, 下载次数: 115 ) Low Power Semiconductor Devices and Processes for Emerging Applications 2018.part2.rar (16.1 MB, 下载次数: 130 ) 2019-7-23 08:45 上传 点击文件名下载附件 下载积分: 资产 -6 信元, 下载支出 6 信元 Low Power Semiconductor Devices and Processes for Emerging Applications 2018.part3.rar (16.1 MB, 下载次数: 126 ) Low Power Semiconductor Devices and Processes for Emerging Applications 2018.part4.rar (16.1 MB, 下载次数: 122 ) Low Power Semiconductor Devices and Processes for Emerging Applications 2018.part5.rar (298.5 KB, 下载次数: 64 ) Making processing information more energy-effcient would save money, reduce energy use and permit batteries that provide power to mobile devices to run longer or be smaller in size. New approaches to the lower energy requirement in computing, communication and sensing need to be investigated. This book addresses this need in multiple application areas and will serve as a guide in emerging circuit technologies. Revolutionary device concepts, sensors and associated circuits and architectures that will greatly extend the practical engineering limits of energy-effcient computation are being investigated. Disruptive new device architectures, semiconductor processes and emerging new materials aimed at achieving the highest level of computational energy effciency for general purpose computing systems need to be developed. This book will provide chapters dedicated to such efforts from process to device.

An introduction to the physical principles of modern semiconductor devices and their advanced fabrication technology. It begins with a brief historical review of major devices and key technologies and is then divided into three sections: semiconductor material properties, physics of semiconductor devices and processing technology to fabricate these semiconductor devices.

Fundamentals of Power Semiconductor Devices provides an in-depth treatment of the physics of operation of power semiconductor devices that are commonly used by the power electronics industry. Analytical models for explaining the operation of all power semiconductor devices are shown. The treatment here focuses on silicon devices but includes the unique attributes and design requirements for emerging silicon carbide devices. The book will appeal to practicing engineers in the power semiconductor device community.

英文版，作者S.M.SZE，KWOK K. NG 一共四部分,其它: Physics of Semiconductor devices (3rd Edition)-part 2 Physics of Semiconductor devices (3rd Edition)-part 3 Physics of Semiconductor devices (3rd Edition)-part 4

Fundamentals of Power Semiconductor Devices 第二版 Fundamentals of Power Semiconductor Devices 第二版.part1.rar (15 MB, 下载次数: 606 ) Fundamentals of Power Semiconductor Devices 第二版.part2.rar (15 MB, 下载次数: 552 ) Fundamentals of Power Semiconductor Devices 第二版.part3.rar (2.79 MB, 下载次数: 299 ) Springer International Publishing AG, part of Springer Nature 2008, 2019 This work is subject to copyright. All rights are reserved by the Publisher, whether the whole or part of the material is concerned, specifically the rights of translation, reprinting, reuse of illustrations, recitation, broadcasting, reproduction on microfilms or in any other physical way, and transmission or information storage and retrieval, electronic adaptation, computer software, or by similar or dissimilar methodology now known or hereafter developed. 本主题由 jack

这本教科书提供了常见半导体器件的基本原理，特别侧重于金属氧化物半导体场效应晶体管（MOSFET）。

介绍 stdf2map是一个基于python的轻量级命令行应用程序，用于从半导体行业中使用的自动测试设备（ATE）创建的行业标准STDF数据文件中生成外观合理的Bin晶圆图。 特征 支持STDF文件中的多个晶片 处理同一晶圆上的芯片的多次测试（重新测试） 支持映射软件或硬件BIN（ sbin或hbin ） 进行多重测试时未导致相同仓号的管芯标记 仓位可分配符号改善了关键仓位的视觉反馈。 基于零件的配置文件允许按部分分配料箱标签，颜色，选项等 高度可配置，几乎每个方面都可以通过配置文件进行更改 创建可以制作成海报的小缩略图或大图像 自动调整大小功能使具有数千个晶片的晶圆具有自动创建的清晰图。 基于命令行，应该易于集成到用户编写的脚本中，以自动/批量创建晶圆图。 支持文件通配，只需一个命令即可创建地图的整个目录。 演示模式可创建逼真的晶圆图，并提供测试可能超出可用STDF文件范围的

IEC 60749-1_44 Semiconductor devices – Mechanical and climatic test methods -包含全部45份最新英文版标准文件.7z